The R6077VNZ4 from ROHM Semiconductors is an N-Channel Enhancement Mode Power MOSFET. This Power MOSFET has a drain-source breakdown voltage of over 600 V, a gate threshold voltage of 5.5 V, and a drain-source resistance of 42 milliohm. It has a continuous drain current of up to 77 A and a pulsed drain current of less than 231 A. This MOSFET has a power dissipation of up to 781 W. It has a fast recovery time, low on-state resistance, fast switching speed, and can drive circuits easily. This RoHS compliant MOSFET is available as a through-hole package that measures 15.64 x 40.42 mm and is ideal for use in high-speed switching applications.