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R6077VNZ4 Image

The R6077VNZ4 from ROHM Semiconductors is an N-Channel Enhancement Mode Power MOSFET. This Power MOSFET has a drain-source breakdown voltage of over 600 V, a gate threshold voltage of 5.5 V, and a drain-source resistance of 42 milliohm. It has a continuous drain current of up to 77 A and a pulsed drain current of less than 231 A. This MOSFET has a power dissipation of up to 781 W. It has a fast recovery time, low on-state resistance, fast switching speed, and can drive circuits easily. This RoHS compliant MOSFET is available as a through-hole package that measures 15.64 x 40.42 mm and is ideal for use in high-speed switching applications.

Product Specifications

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Product Details

  • Part Number
  • Manufacturer
    ROHM Semiconductor
  • Description
    600 V N Channel Enhancement Mode MOSFET


  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
  • Dimensions
    15.64 x 40.42 mm
  • Number of Channels
  • Continous Drain Current
    -77 to 77 A
  • Drain Source Resistance
    42 milliohm
  • Drain Source Breakdown Voltage
    600 V
  • Gate Source Voltage
    -30 to 30 V
  • Gate Source Threshold Voltage
    5.5 V
  • Gate Charge
    108 nC
  • Power Dissipation
    781 W
  • Temperature operating range
    150 degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
  • Package Type
    Through Hole
  • Package
  • Applications

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