RA1C030LDT5CL

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RA1C030LDT5CL Image

The RA1C030LDT5CL from ROHM Semiconductor is a MOSFET with Continous Drain Current 3 A, Drain Source Resistance 140 milliohm, Drain Source Breakdown Voltage 20 V, Gate Source Voltage 7 V, Gate Source Threshold Voltage 1.5 V. Tags: Surface Mount. More details for RA1C030LDT5CL can be seen below.

Product Specifications

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Product Details

  • Part Number
    RA1C030LDT5CL
  • Manufacturer
    ROHM Semiconductor
  • Description
    20 V N-channel Enhancement MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Technology
    Silicon
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    3 A
  • Drain Source Resistance
    140 milliohm
  • Drain Source Breakdown Voltage
    20 V
  • Gate Source Voltage
    7 V
  • Gate Source Threshold Voltage
    1.5 V
  • Gate Charge
    1.5 nC
  • Power Dissipation
    1 W
  • Temperature operating range
    -55 to 150 Degree C
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    WLCSP
  • Applications
    Switching circuits, Single-Cell Battery Applications, Mobile Applications

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