The RD3G400GN from ROHM Semiconductor is a MOSFET with Continous Drain Current -40 to 40 A, Drain Source Resistance 5.6 to 9.5 Milliohm, Drain Source Breakdown Voltage 40 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1 to 2.5 V. Tags: Surface Mount. More details for RD3G400GN can be seen below.