The RD3P200SN from ROHM Semiconductor is a MOSFET with Continous Drain Current -20 to 20 A, Drain Source Resistance 33 to 50 Milliohm, Drain Source Breakdown Voltage 100 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1 to 2.5 V. Tags: Surface Mount. More details for RD3P200SN can be seen below.