RJ1P12BBD

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RJ1P12BBD Image

The RJ1P12BBD from ROHM Semiconductor is a MOSFET with Continous Drain Current -120 to 120 A, Drain Source Resistance 4.4 to 7.8 Milliohm, Drain Source Breakdown Voltage 100 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 2 to 4 V. Tags: Surface Mount. More details for RJ1P12BBD can be seen below.

Product Specifications

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Product Details

  • Part Number
    RJ1P12BBD
  • Manufacturer
    ROHM Semiconductor
  • Description
    100 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -120 to 120 A
  • Drain Source Resistance
    4.4 to 7.8 Milliohm
  • Drain Source Breakdown Voltage
    100 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    2 to 4 V
  • Gate Charge
    80 nC
  • Power Dissipation
    178 W
  • Temperature operating range
    150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    TO263AB
  • Applications
    Switching

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