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RV8C010UNHZG

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RV8C010UNHZG Image

The RV8C010UNHZG from ROHM Semiconductor is a MOSFET with Continous Drain Current -1 to 1 A, Drain Source Resistance 340 to 1050 milliohm, Drain Source Breakdown Voltage 20 V, Gate Source Voltage -8 to 8 V, Gate Source Threshold Voltage 0.3 to 1 V. Tags: Surface Mount. More details for RV8C010UNHZG can be seen below.

Product Specifications

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Product Details

  • Part Number
    RV8C010UNHZG
  • Manufacturer
    ROHM Semiconductor
  • Description
    20 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -1 to 1 A
  • Drain Source Resistance
    340 to 1050 milliohm
  • Drain Source Breakdown Voltage
    20 V
  • Gate Source Voltage
    -8 to 8 V
  • Gate Source Threshold Voltage
    0.3 to 1 V
  • Power Dissipation
    1 W
  • Temperature operating range
    150 Degree C
  • Industry
    Commercial, Automotive
  • Qualification
    AEC-Q101
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    DFN1010-3W
  • Applications
    Switching circuits, Low-side loadswitch, Relay driver

Technical Documents
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