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GCMX020B120S1-E1

MOSFET by SemiQ (5 more products)
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GCMX020B120S1-E1 Image

The GCMX020B120S1-E1 from SemiQ is a MOSFET with Continous Drain Current 113 A, Drain Source Resistance 18 milli-ohm, Drain Source Breakdown Voltage 1200 V, Gate Source Voltage 20 V, Gate Source Threshold Voltage 2.8 V. Tags: Module. More details for GCMX020B120S1-E1 can be seen below.

Product Specifications

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Product Details

  • Part Number
    GCMX020B120S1-E1
  • Manufacturer
    SemiQ
  • Description
    1200 V SiC MOSFET Power Module

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Technology
    SiC
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    113 A
  • Drain Source Resistance
    18 milli-ohm
  • Drain Source Breakdown Voltage
    1200 V
  • Gate Source Voltage
    20 V
  • Gate Source Threshold Voltage
    2.8 V
  • Gate Charge
    216 nC
  • Power Dissipation
    395 W
  • Temperature operating range
    -55 to 175 Degree C
  • Industry
    Industrial, Medical, Electric Vehicle
  • RoHS Compliant
    Yes
  • Package Type
    Module
  • Applications
    Photovoltaic Inverter, Battery charger, Server power supplies, Energy storage system

Technical Documents
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