P11F60EVA Image

P11F60EVA

Note : Your request will be directed to Shindengen America.

The P11F60EVA from Shindengen America is a MOSFET with Continous Drain Current 11 A, Drain Source Resistance 270 to 320 milliohm, Drain Source Breakdown Voltage 600 V, Gate Source Voltage -30 to 30 V, Gate Source Threshold Voltage 2.5 to 4.5 V. Tags: Through Hole. More details for P11F60EVA can be seen below.

Product Specifications

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Product Details

  • Part Number
    P11F60EVA
  • Manufacturer
    Shindengen America
  • Description
    600 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    11 A
  • Drain Source Resistance
    270 to 320 milliohm
  • Drain Source Breakdown Voltage
    600 V
  • Gate Source Voltage
    -30 to 30 V
  • Gate Source Threshold Voltage
    2.5 to 4.5 V
  • Gate Charge
    32 nC
  • Power Dissipation
    57 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial, Industrial
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    FTO-220AG
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