P1B52HP2 Image

P1B52HP2

Note : Your request will be directed to Shindengen America.

The P1B52HP2 from Shindengen America is a MOSFET with Continous Drain Current 1 A, Drain Source Resistance 6000 to 7200 milliohm, Drain Source Breakdown Voltage 525 V, Gate Source Voltage -30 to 30 V, Gate Source Threshold Voltage 3 to 4.5 V. Tags: Surface Mount. More details for P1B52HP2 can be seen below.

Product Specifications

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Product Details

  • Part Number
    P1B52HP2
  • Manufacturer
    Shindengen America
  • Description
    525 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    1 A
  • Drain Source Resistance
    6000 to 7200 milliohm
  • Drain Source Breakdown Voltage
    525 V
  • Gate Source Voltage
    -30 to 30 V
  • Gate Source Threshold Voltage
    3 to 4.5 V
  • Gate Charge
    4.3 nC
  • Power Dissipation
    35 W
  • Temperature operating range
    150 Degree C
  • Industry
    Commercial, Industrial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    TO-252AA
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