P50F10SN Image

P50F10SN

Note : Your request will be directed to Shindengen America.

The P50F10SN from Shindengen America is a MOSFET with Continous Drain Current 50 A, Drain Source Resistance 6.9 to 8.7 milliohm, Drain Source Breakdown Voltage 100 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 2 to 4 V. Tags: Through Hole. More details for P50F10SN can be seen below.

Product Specifications

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Product Details

  • Part Number
    P50F10SN
  • Manufacturer
    Shindengen America
  • Description
    100 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    50 A
  • Drain Source Resistance
    6.9 to 8.7 milliohm
  • Drain Source Breakdown Voltage
    100 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    2 to 4 V
  • Gate Charge
    114 nC
  • Power Dissipation
    51 W
  • Temperature operating range
    150 Degree C
  • Industry
    Commercial, Industrial
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    FTO-220AG
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