P66F7R5SN Image

P66F7R5SN

Note : Your request will be directed to Shindengen America.

The P66F7R5SN from Shindengen America is a MOSFET with Continous Drain Current 66 A, Drain Source Resistance 4 to 5 milliohm, Drain Source Breakdown Voltage 75 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 2 to 4 V. Tags: Through Hole. More details for P66F7R5SN can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    P66F7R5SN
  • Manufacturer
    Shindengen America
  • Description
    75 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    66 A
  • Drain Source Resistance
    4 to 5 milliohm
  • Drain Source Breakdown Voltage
    75 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    2 to 4 V
  • Gate Charge
    115 nC
  • Power Dissipation
    51 W
  • Temperature operating range
    150 Degree C
  • Industry
    Commercial, Industrial
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    FTO-220AG
Need Help Finding a Product?

Looking for a Product or Supplier?

Let us know what you need, we can help find products that meet your requirement.