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STB20N95K5 Image

The STB20N95K5 from STMicroelectronics is an N-Channel Enhancement Mode Power MOSFET. It has a drain-source breakdown voltage of over 950 V, a gate-source voltage of up to 30 V, and a drain-source on-resistance of 275 mΩ. This power MOSFET has a continuous drain current of up to 17.5 A and power dissipation of less than 250 W. It is designed using MDmesh K5 technology that is based on an innovative proprietary vertical structure, thereby resulting in a dramatic reduction in on-resistance and total gate charge for applications requiring superior power density and high efficiency.

This MOSFET is Zener-protected and offers the industry’s best Figure of Merit (FoM). It is available in a surface-mount package that measures 10 x 15 mm and is ideal for switching applications.

Product Specifications

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Product Details

  • Part Number
  • Manufacturer
  • Description
    N-Channel Power MOSFET for Switching Applications


  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
  • Dimensions
    10 x 15 mm
  • Number of Channels
  • Continous Drain Current
    17.5 A
  • Drain Source Resistance
    275 milliohm
  • Drain Source Breakdown Voltage
    950 V
  • Gate Source Voltage
    -30 to 30 V
  • Gate Source Threshold Voltage
    3 to 5 V
  • Gate Charge
    48 nC
  • Power Dissipation
    250 W
  • Temperature operating range
    -55 to 150 Degree C
  • Package Type
    Surface Mount
  • Package
  • Applications
    Switching applications

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