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STD8N60DM2 Image

The STD8N60DM2 from STMicroelectronics is an N-Channel Enhancement Mode Power MOSFET that is ideal for switching applications. It has a drain-source breakdown voltage of over 600 V, a gate threshold voltage of 4 V, and a drain-source on-resistance of less than 600 mΩ. This power MOSFET has a continuous drain current of up to 8 A and power dissipation of less than 85 W. This N-channel Power MOSFET is based on MDmesh technology and offers a very low reverse recovery charge, low reverse recovery time, and low drain-source resistance, thereby enabling high-efficiency converters, bridge topologies, and ZVS phase-shift converters. This MOSFET provides Zener breakdown protection to prevent device saturation. It is available in a surface-mount package that measures 6.60 x 10.10 mm.

Product Specifications

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Product Details

  • Part Number
  • Manufacturer
  • Description
    600 V N-Channel Enhancement Mode Power MOSFET


  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
  • Number of Channels
  • Continous Drain Current
    8 A
  • Drain Source Resistance
    550 to 600 Milliohm
  • Drain Source Breakdown Voltage
    600 V
  • Gate Source Voltage
    - 25 to 25 V
  • Gate Source Threshold Voltage
    3 to 5 V
  • Gate Charge
    13.5 nC
  • Power Dissipation
    85 W
  • Temperature operating range
    -55 to 150 Degree C
  • Package Type
    Surface Mount
  • Package
  • Applications
    Switching applications

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