The STD8N60DM2 from STMicroelectronics is an N-Channel Enhancement Mode Power MOSFET that is ideal for switching applications. It has a drain-source breakdown voltage of over 600 V, a gate threshold voltage of 4 V, and a drain-source on-resistance of less than 600 mΩ. This power MOSFET has a continuous drain current of up to 8 A and power dissipation of less than 85 W. This N-channel Power MOSFET is based on MDmesh technology and offers a very low reverse recovery charge, low reverse recovery time, and low drain-source resistance, thereby enabling high-efficiency converters, bridge topologies, and ZVS phase-shift converters. This MOSFET provides Zener breakdown protection to prevent device saturation. It is available in a surface-mount package that measures 6.60 x 10.10 mm.