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STH60N099DM9-2AG Image

The STH60N099DM9-2AG from STMicroelectronics is an Automotive-Qualified N-Channel Enhancement Mode Power MOSFET that is ideal for high-efficiency switching applications. It has a drain-source breakdown voltage of over 600 V, a gate threshold voltage of 4 V, and a drain-source on-resistance of less than 99 milli-ohms. This power MOSFET has a continuous drain current of up to 27 A and a power dissipation of less than 179 W.  It is based on super-junction MDmesh DM9 technology that is suitable for medium/high voltage MOSFETs featuring very low drain-source on-resistance per area. This AEC-Q101-qualified power MOSFET benefits from a fast-recovery diode that features very low recovery charge, time, and drain-source on-resistance, making it a fast-switching super-junction power MOSFET tailored for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters. It features low gate charge, input capacitance, and resistance. It offers excellent switching performance due to the extra driving source pin. This avalanche-tested power MOSFET is available in a surface-mount package that measures 16.90 x 12.20 mm.

Product Specifications

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Product Details

  • Part Number
  • Manufacturer
  • Description
    600 V Automotive Qualified N-Channel Enhancement Mode MOSFET


  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
  • Dimensions
    16.90 x 12.20 mm
  • Number of Channels
  • Continous Drain Current
    27 A
  • Drain Source Resistance
    99 milli-ohm
  • Drain Source Breakdown Voltage
    600 V
  • Gate Source Voltage
    30 V
  • Gate Source Threshold Voltage
    4 V
  • Gate Charge
    44 nC
  • Power Dissipation
    179 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
  • Qualification
  • Package Type
    Surface Mount
  • Package
  • Applications
    High efficiency switching applications

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