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STP60N043DM9

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The STP60N043DM9 from STMicroelectronics is a N-Channel Silicon Power MOSFET that is designed for LLC resonant converter, power supplies & converter applications. It is developed using an innovative super-junction MDmesh DM9 technology. This technology is suitable for medium/high voltage MOSFETs which has a very low drain-source resistance per area coupled with a fast-recovery diode. It has a gate-source voltage of ± 30 V and a gate threshold voltage of up to 4.5 V. This MOSFET has a drain-source breakdown voltage of 600 V and a drain-source resistance of up to 43 mΩ. It has a power dissipation of 245 W and a continuous drain current of up to 56 A. This MOSFET consist of a fast-recovery diode that offer very low recovery charge, recovery time and drain-source resistance. This feature enables the MOSFET to be used for most demanding high-efficiency bridge topologies and ZVS phase-shift converters. It has low gate charge, input capacitance and resistance. This MOSFET is available as a through hole package.

Product Specifications

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Product Details

  • Part Number
    STP60N043DM9
  • Manufacturer
    STMicroelectronics
  • Description
    600 V N-Channel Silicon Power MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Technology
    Silicon
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    56 A
  • Drain Source Resistance
    38 to 43 milliohm
  • Drain Source Breakdown Voltage
    600 V
  • Gate Source Voltage
    -30 to 30 V
  • Gate Source Threshold Voltage
    3.5 to 4.5 V
  • Gate Charge
    78.6 nC
  • Power Dissipation
    245 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial
  • Package Type
    Through Hole
  • Package
    TO-220
  • Applications
    Llc resonant converter, Power supplies and converters

Technical Documents

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