STP65N045M9 Image


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The STP65N045M9 from STMicroelectronics is an N-Channel Enhancement Mode Power MOSFET. It has a drain-source breakdown voltage of over 650 V, a gate-source threshold voltage of 3.7 V, and a drain-source resistance of less than 45 milliohm. This Power MOSFET has a continuous drain current of up to 55 A and a pulsed drain current of 170 A. It has a power dissipation of up to 245 W. This MOSFET uses the most innovative silicon-based super-junction MDmesh M9 technology that is designed through a multi-drain manufacturing process thereby offering an enhanced device structure. It is available in a through-hole package that measures 10 mm x 28.90 mm and is ideal for high-efficiency switching applications.

Product Specifications

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Product Details

  • Part Number
  • Manufacturer
  • Description
    N Channel Enhancement Mode MOSFET for Switching Applications


  • Types of MOSFET
    N-Channel Enhancement Mode
  • Technology
  • Transistor Polarity
  • Dimensions
    10 mm x 28.90 mm
  • Number of Channels
  • Continous Drain Current
    55 A
  • Drain Source Resistance
    45 milliohm
  • Drain Source Breakdown Voltage
    650 V
  • Gate Source Voltage
    -30 to 30 V
  • Gate Source Threshold Voltage
    3.7 V
  • Gate Charge
    80 nC
  • Power Dissipation
    245 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
  • Package Type
    Through Hole
  • Package
  • Applications
    High efficiency switching applications

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