STP65N045M9 Image

STP65N045M9

Note : Your request will be directed to STMicroelectronics.

The STP65N045M9 from STMicroelectronics is an N-Channel Enhancement Mode Power MOSFET. It has a drain-source breakdown voltage of over 650 V, a gate-source threshold voltage of 3.7 V, and a drain-source resistance of less than 45 milliohm. This Power MOSFET has a continuous drain current of up to 55 A and a pulsed drain current of 170 A. It has a power dissipation of up to 245 W. This MOSFET uses the most innovative silicon-based super-junction MDmesh M9 technology that is designed through a multi-drain manufacturing process thereby offering an enhanced device structure. It is available in a through-hole package that measures 10 mm x 28.90 mm and is ideal for high-efficiency switching applications.

Product Specifications

View similar products

Product Details

  • Part Number
    STP65N045M9
  • Manufacturer
    STMicroelectronics
  • Description
    N Channel Enhancement Mode MOSFET for Switching Applications

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Technology
    Silicon
  • Transistor Polarity
    N-Channel
  • Dimensions
    10 mm x 28.90 mm
  • Number of Channels
    Single
  • Continous Drain Current
    55 A
  • Drain Source Resistance
    45 milliohm
  • Drain Source Breakdown Voltage
    650 V
  • Gate Source Voltage
    -30 to 30 V
  • Gate Source Threshold Voltage
    3.7 V
  • Gate Charge
    80 nC
  • Power Dissipation
    245 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial
  • Package Type
    Through Hole
  • Package
    TO-220
  • Applications
    High efficiency switching applications

Technical Documents

Need Help Finding a Product?

Looking for a Product or Supplier?

Let us know what you need, we can help find products that meet your requirement.