TQM110NB04DCR

Note : Your request will be directed to Taiwan Semiconductor.

TQM110NB04DCR Image

The TQM110NB04DCR from Taiwan Semiconductor is a MOSFET with Continous Drain Current 50 A, Drain Source Resistance 8 to 23 milliohm, Drain Source Breakdown Voltage 40 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1.8 to 3.8 V. Tags: Surface Mount. More details for TQM110NB04DCR can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    TQM110NB04DCR
  • Manufacturer
    Taiwan Semiconductor
  • Description
    40 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Dual
  • Continous Drain Current
    50 A
  • Drain Source Resistance
    8 to 23 milliohm
  • Drain Source Breakdown Voltage
    40 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    1.8 to 3.8 V
  • Gate Charge
    19 to 26 nC
  • Power Dissipation
    0.8 to 58 W
  • Temperature operating range
    -55 to 175 Degree C
  • Industry
    Automotive
  • Qualification
    AEC-Q101
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    PDFN56U
  • Applications
    Automotive Systems, Solenoid and Motor Control, Automotive Transmission Contro, DC-DC Converters

Technical Documents