2SK3565 Image

2SK3565

Note : Your request will be directed to Toshiba.

The 2SK3565 from Toshiba is a MOSFET with Continous Drain Current 5 A, Drain Source Resistance 2000 to 2500 milliohm, Drain Source Breakdown Voltage 900 V, Gate Source Voltage -30 to 30 V, Gate Source Threshold Voltage 2 to 4 V. Tags: Through Hole. More details for 2SK3565 can be seen below.

Product Specifications

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Product Details

  • Part Number
    2SK3565
  • Manufacturer
    Toshiba
  • Description
    900 V, 28 nC, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Technology
    Silicon
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    5 A
  • Drain Source Resistance
    2000 to 2500 milliohm
  • Drain Source Breakdown Voltage
    900 V
  • Gate Source Voltage
    -30 to 30 V
  • Gate Source Threshold Voltage
    2 to 4 V
  • Gate Charge
    28 nC
  • Power Dissipation
    45 W
  • Industry
    Industrial, Military, Automotive
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    TO-220
  • Applications
    Switching Regulator Applications

Technical Documents

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