2SK3798

Note : Your request will be directed to Toshiba.

The 2SK3798 from Toshiba is a MOSFET with Continous Drain Current 4 A, Drain Source Resistance 2500 to 3500 milliohm, Drain Source Breakdown Voltage 900 V, Gate Source Voltage -30 to 30 V, Gate Source Threshold Voltage 2 to 4 V. Tags: Through Hole. More details for 2SK3798 can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    2SK3798
  • Manufacturer
    Toshiba
  • Description
    900 V, 26 nC, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Technology
    Silicon
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    4 A
  • Drain Source Resistance
    2500 to 3500 milliohm
  • Drain Source Breakdown Voltage
    900 V
  • Gate Source Voltage
    -30 to 30 V
  • Gate Source Threshold Voltage
    2 to 4 V
  • Gate Charge
    26 nC
  • Power Dissipation
    40 W
  • Industry
    Industrial, Military, Automotive
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    TO-220
  • Applications
    Switching Regulator Applications

Technical Documents

Need Help Finding a Product?

Looking for a Product or Supplier?

Let us know what you need, we can help find products that meet your requirement.