2SK4207

Note : Your request will be directed to Toshiba.

The 2SK4207 from Toshiba is a MOSFET with Continous Drain Current 13 A, Drain Source Resistance 780 to 950 milliohm, Drain Source Breakdown Voltage 900 V, Gate Source Voltage -30 to 30 V, Gate Source Threshold Voltage 2 to 4 V. Tags: Through Hole. More details for 2SK4207 can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    2SK4207
  • Manufacturer
    Toshiba
  • Description
    900 V, 45 nC, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Technology
    Silicon
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    13 A
  • Drain Source Resistance
    780 to 950 milliohm
  • Drain Source Breakdown Voltage
    900 V
  • Gate Source Voltage
    -30 to 30 V
  • Gate Source Threshold Voltage
    2 to 4 V
  • Gate Charge
    45 nC
  • Power Dissipation
    150 W
  • Industry
    Industrial, Military, Automotive
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    TO-3P
  • Applications
    Switching Regulator Applications

Technical Documents

Need Help Finding a Product?

Looking for a Product or Supplier?

Let us know what you need, we can help find products that meet your requirement.