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SSM10N954L

MOSFET by Toshiba

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The SSM10N954L from Toshiba is a MOSFET with Drain Source Breakdown Voltage 12 V, Gate Source Voltage -8 to 8 V, Gate Source Threshold Voltage 0.35 to 1.4 V, Gate Charge -8 to 25 nC, Power Dissipation 0.8 to 1.4 W. Tags: Surface Mount. More details for SSM10N954L can be seen below.

Product Specifications

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Product Details

  • Part Number
    SSM10N954L
  • Manufacturer
    Toshiba
  • Description
    12 V Dual N-channel E-mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Dimensions
    1.49 x 2.98 x 0.11 mm
  • Number of Channels
    Dual
  • Drain Source Breakdown Voltage
    12 V
  • Gate Source Voltage
    -8 to 8 V
  • Gate Source Threshold Voltage
    0.35 to 1.4 V
  • Gate Charge
    -8 to 25 nC
  • Power Dissipation
    0.8 to 1.4 W
  • Industry
    Batteries
  • Package Type
    Surface Mount
  • Applications
    Battery protection circuits

Technical Documents

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