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SSM10N954L Image

The SSM10N954L from Toshiba is a Dual N-Channel Power MOSFET that is specifically designed for battery protection circuits. It has a source-source breakdown voltage of over 12 V, a gate threshold voltage of 1.4 V, and a source resistance of 2.1-2.4 milli-ohms. This RoHS complaint MOSFET has a power dissipation of up to 0.8 W and offers low source-source on-resistance. It is available in a surface-mount package that measures 2.98 x 1.49 x 0.11 mm.

Product Specifications

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Product Details

  • Part Number
  • Manufacturer
  • Description
    Dual N Channel Power MOSFET for Battery Protection Circuits


  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
  • Dimensions
    1.49 x 2.98 x 0.11 mm
  • Number of Channels
  • Drain Source Breakdown Voltage
    12 V
  • Gate Source Voltage
    -8 to 8 V
  • Gate Source Threshold Voltage
    0.35 to 1.4 V
  • Gate Charge
    -8 to 25 nC
  • Power Dissipation
    0.8 to 1.4 W
  • Package Type
    Surface Mount
  • Applications
    Battery protection circuits

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