The SSM14N956L from Toshiba is a Dual N-Channel Power MOSFET that has been specifically designed for battery protection circuit applications. It has a source-source breakdown voltage of over 12 V, a gate threshold voltage of 1.4 V, and a source resistance of less than 3.20 milli-ohms. This RoHS-compliant MOSFET has a power dissipation of less than 1.33 W. It is available in a surface-mount package that measures 3.0 x 2.74 x 0.085 mm.
