SSM6K819R

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SSM6K819R Image

The SSM6K819R from Toshiba is a MOSFET with Continous Drain Current 10 A, Drain Source Resistance 2.9 to 36.4 Milliohm, Drain Source Breakdown Voltage 100 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1.5 to 2.5 V. Tags: Surface Mount. More details for SSM6K819R can be seen below.

Product Specifications

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Product Details

  • Part Number
    SSM6K819R
  • Manufacturer
    Toshiba
  • Description
    100 V, 8.5 nC, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    10 A
  • Drain Source Resistance
    2.9 to 36.4 Milliohm
  • Drain Source Breakdown Voltage
    100 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    1.5 to 2.5 V
  • Gate Charge
    8.5 nC
  • Power Dissipation
    3 W
  • Qualification
    AEC-Q101
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    TSOP6F
  • Applications
    Power Management Switches, High-Speed Switching

Technical Documents