SSM6N15AFE

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SSM6N15AFE Image

The SSM6N15AFE from Toshiba is a MOSFET with Continous Drain Current 0.1 A, Drain Source Resistance 2300 to 6000 Milliohm, Drain Source Breakdown Voltage 30 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 0.8 to 1.5 V. Tags: Surface Mount. More details for SSM6N15AFE can be seen below.

Product Specifications

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Product Details

  • Part Number
    SSM6N15AFE
  • Manufacturer
    Toshiba
  • Description
    0.15 W, 30 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Dual
  • Continous Drain Current
    0.1 A
  • Drain Source Resistance
    2300 to 6000 Milliohm
  • Drain Source Breakdown Voltage
    30 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    0.8 to 1.5 V
  • Power Dissipation
    0.15 W
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SOT-563
  • Applications
    Load Switching Applications

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