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SSM6N35AFU

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SSM6N35AFU Image

The SSM6N35AFU from Toshiba is a MOSFET with Continous Drain Current 0.25 A, Drain Source Resistance 750 to 9000 Milliohm, Drain Source Breakdown Voltage 20 V, Gate Source Voltage -10 to 10 V, Gate Source Threshold Voltage 0.35 to 1 V. Tags: Surface Mount. More details for SSM6N35AFU can be seen below.

Product Specifications

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Product Details

  • Part Number
    SSM6N35AFU
  • Manufacturer
    Toshiba
  • Description
    20 V, 0.34 nC, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Dual
  • Continous Drain Current
    0.25 A
  • Drain Source Resistance
    750 to 9000 Milliohm
  • Drain Source Breakdown Voltage
    20 V
  • Gate Source Voltage
    -10 to 10 V
  • Gate Source Threshold Voltage
    0.35 to 1 V
  • Gate Charge
    0.34 nC
  • Power Dissipation
    0.285 W
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SOT-363
  • Applications
    High-Speed Switching, Analog Switches

Technical Documents
View details on the manufacturer's website
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