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SSM6N61NU

Note : Your request will be directed to Toshiba.

The SSM6N61NU from Toshiba is a MOSFET with Continous Drain Current 4 A, Drain Source Resistance 25 to 108 milliohm, Drain Source Breakdown Voltage 20 V, Gate Source Voltage -8 to 8 V, Gate Source Threshold Voltage 0.4 to 1 V. Tags: Surface Mount. More details for SSM6N61NU can be seen below.

Product Specifications

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Product Details

  • Part Number
    SSM6N61NU
  • Manufacturer
    Toshiba
  • Description
    20 V, 3.6 nC, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Technology
    Silicon
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Dual
  • Continous Drain Current
    4 A
  • Drain Source Resistance
    25 to 108 milliohm
  • Drain Source Breakdown Voltage
    20 V
  • Gate Source Voltage
    -8 to 8 V
  • Gate Source Threshold Voltage
    0.4 to 1 V
  • Gate Charge
    3.6 nC
  • Power Dissipation
    2 W
  • Industry
    Commercial, Industrial, Automotive
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    UDFN6
  • Applications
    Power Management Switches, DC-DC Converters

Technical Documents

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