SSM6P47NU

Note : Your request will be directed to Toshiba.

SSM6P47NU Image

The SSM6P47NU from Toshiba is a MOSFET with Continous Drain Current -4 A, Drain Source Resistance 88.5 to 242 Milliohm, Drain Source Breakdown Voltage -20 V, Gate Source Voltage -8 to 8 V, Gate Source Threshold Voltage -1 to -0.3 V. Tags: Surface Mount. More details for SSM6P47NU can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    SSM6P47NU
  • Manufacturer
    Toshiba
  • Description
    -20 V, 4.6 nC, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Dual
  • Continous Drain Current
    -4 A
  • Drain Source Resistance
    88.5 to 242 Milliohm
  • Drain Source Breakdown Voltage
    -20 V
  • Gate Source Voltage
    -8 to 8 V
  • Gate Source Threshold Voltage
    -1 to -0.3 V
  • Gate Charge
    4.6 nC
  • Power Dissipation
    2 W
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    UDFN6
  • Applications
    Power Management Switches

Technical Documents