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TJ15P04M3

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TJ15P04M3 Image

The TJ15P04M3 from Toshiba is a MOSFET with Continous Drain Current -15 A, Drain Source Resistance 28 to 48 Milliohm, Drain Source Breakdown Voltage -40 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage -2 to -0.8 V. Tags: Surface Mount. More details for TJ15P04M3 can be seen below.

Product Specifications

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Product Details

  • Part Number
    TJ15P04M3
  • Manufacturer
    Toshiba
  • Description
    -40 V, 26 nC, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -15 A
  • Drain Source Resistance
    28 to 48 Milliohm
  • Drain Source Breakdown Voltage
    -40 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    -2 to -0.8 V
  • Gate Charge
    26 nC
  • Power Dissipation
    29 W
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    DPAK
  • Applications
    Motor Drivers, Power Management Switches

Technical Documents
View details on the manufacturer's website
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