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TK042N65Z5 Image

The TK042N65Z5 from Toshiba is an N-Channel Silicon MOSFET that is ideal for switching voltage regulator applications. It has a drain-source breakdown voltage of over 650 V, a gate threshold voltage of 4.5 V, and a drain-source on-resistance of 35 milli-ohms. This MOSFET has a continuous drain current of up to 55 A and a pulsed drain current of less than 220 A. It has a power dissipation of 360 W. This Si MOSFET has a fast reverse recovery time and high-speed switching properties with lower capacitance. It is available in a through-hole package that measures 41.02 x 15.94 mm.

Product Specifications

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Product Details

  • Part Number
  • Manufacturer
  • Description
    650 V N-Channel Silicon MOSFET


  • Types of MOSFET
    N-Channel Enhancement Mode
  • Technology
  • Transistor Polarity
  • Dimensions
    41.02 x 15.94 mm
  • Number of Channels
  • Continous Drain Current
    55 A
  • Drain Source Resistance
    35 milli-ohm
  • Drain Source Breakdown Voltage
    650 V
  • Gate Source Voltage
    30 V
  • Gate Source Threshold Voltage
    4.5 V
  • Gate Charge
    105 nC
  • Power Dissipation
    360 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial, Industrial
  • Package Type
    Through Hole
  • Package
  • Applications
    Switching Voltage Regulators

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