TK1R5R04PB Image

TK1R5R04PB

Note : Your request will be directed to Toshiba.

The TK1R5R04PB from Toshiba is a MOSFET with Continous Drain Current 160 A, Drain Source Resistance 1.25 to 2.05 milliohm, Drain Source Breakdown Voltage 40 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 2 to 3 V. Tags: Surface Mount. More details for TK1R5R04PB can be seen below.

Product Specifications

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Product Details

  • Part Number
    TK1R5R04PB
  • Manufacturer
    Toshiba
  • Description
    40 V, 103 nC, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Technology
    Silicon
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    160 A
  • Drain Source Resistance
    1.25 to 2.05 milliohm
  • Drain Source Breakdown Voltage
    40 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    2 to 3 V
  • Gate Charge
    103 nC
  • Power Dissipation
    205 W
  • Industry
    Commercial, Industrial, Automotive
  • Qualification
    AEC-Q101
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    DPAK
  • Applications
    Automotive, Motor Drivers, DC-DC Converters, Switching Voltage Regulators

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