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TPCC8105

Note : Your request will be directed to Toshiba.

The TPCC8105 from Toshiba is a MOSFET with Continous Drain Current -23 A, Drain Source Resistance 6 to 10.4 milliohm, Drain Source Breakdown Voltage -30 V, Gate Source Voltage -25 to 20 V, Gate Source Threshold Voltage -2 to -0.8 V. Tags: Surface Mount. More details for TPCC8105 can be seen below.

Product Specifications

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Product Details

  • Part Number
    TPCC8105
  • Manufacturer
    Toshiba
  • Description
    -30 V, 76 nC, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Technology
    Silicon
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -23 A
  • Drain Source Resistance
    6 to 10.4 milliohm
  • Drain Source Breakdown Voltage
    -30 V
  • Gate Source Voltage
    -25 to 20 V
  • Gate Source Threshold Voltage
    -2 to -0.8 V
  • Gate Charge
    76 nC
  • Power Dissipation
    30 W
  • Industry
    Industrial, Military, Automotive
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    TSON Advance
  • Applications
    Lithium Ion Battery Applications, Power Management Switch Applications

Technical Documents

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