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TPCC8136

Note : Your request will be directed to Toshiba.

The TPCC8136 from Toshiba is a MOSFET with Continous Drain Current -9.4 A, Drain Source Resistance 13 to 60 milliohm, Drain Source Breakdown Voltage -20 V, Gate Source Voltage -12 to 12 V, Gate Source Threshold Voltage -1.2 to -0.5 V. Tags: Surface Mount. More details for TPCC8136 can be seen below.

Product Specifications

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Product Details

  • Part Number
    TPCC8136
  • Manufacturer
    Toshiba
  • Description
    -20 V, 36 nC, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Technology
    Silicon
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -9.4 A
  • Drain Source Resistance
    13 to 60 milliohm
  • Drain Source Breakdown Voltage
    -20 V
  • Gate Source Voltage
    -12 to 12 V
  • Gate Source Threshold Voltage
    -1.2 to -0.5 V
  • Gate Charge
    36 nC
  • Power Dissipation
    18 W
  • Industry
    Industrial, Military, Automotive
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    TSON Advance
  • Applications
    Power Management Switches

Technical Documents

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