TPCP8207 Image

TPCP8207

Note : Your request will be directed to Toshiba.

The TPCP8207 from Toshiba is a MOSFET with Continous Drain Current 5 A, Drain Source Resistance 29.1 to 62.8 milliohm, Drain Source Breakdown Voltage 40 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 2 to 3 V. Tags: Surface Mount. More details for TPCP8207 can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    TPCP8207
  • Manufacturer
    Toshiba
  • Description
    40 V, 11.8 nC, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Technology
    Silicon
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Dual
  • Continous Drain Current
    5 A
  • Drain Source Resistance
    29.1 to 62.8 milliohm
  • Drain Source Breakdown Voltage
    40 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    2 to 3 V
  • Gate Charge
    11.8 nC
  • Power Dissipation
    1.77 W
  • Industry
    Industrial, Military, Automotive
  • Qualification
    AEC-Q101
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    PS-8
  • Applications
    Motor Drivers, Mobile Equipment

Technical Documents

Need Help Finding a Product?

Looking for a Product or Supplier?

Let us know what you need, we can help find products that meet your requirement.