TPH1R403NL1 Image

TPH1R403NL1

Note : Your request will be directed to Toshiba.

The TPH1R403NL1 from Toshiba is a MOSFET with Continous Drain Current 230 A, Drain Source Resistance 1.2 to 2.1 milliohm, Drain Source Breakdown Voltage 30 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1.3 to 2.3 V. Tags: Surface Mount. More details for TPH1R403NL1 can be seen below.

Product Specifications

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Product Details

  • Part Number
    TPH1R403NL1
  • Manufacturer
    Toshiba
  • Description
    30 V, 46 nC, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Technology
    Silicon
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    230 A
  • Drain Source Resistance
    1.2 to 2.1 milliohm
  • Drain Source Breakdown Voltage
    30 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    1.3 to 2.3 V
  • Gate Charge
    46 nC
  • Power Dissipation
    142 W
  • Industry
    Industrial, Military, Automotive
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SOP Advance
  • Applications
    High-Efficiency DC-DC Converters, Switching Voltage Regulators

Technical Documents

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