TPH7R506NH Image

TPH7R506NH

Note : Your request will be directed to Toshiba.

The TPH7R506NH from Toshiba is a MOSFET with Continous Drain Current 55 A, Drain Source Resistance 6.1 to 19 milliohm, Drain Source Breakdown Voltage 60 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 2 to 4 V. Tags: Surface Mount. More details for TPH7R506NH can be seen below.

Product Specifications

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Product Details

  • Part Number
    TPH7R506NH
  • Manufacturer
    Toshiba
  • Description
    60 V, 31 nC, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Technology
    Silicon
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    55 A
  • Drain Source Resistance
    6.1 to 19 milliohm
  • Drain Source Breakdown Voltage
    60 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    2 to 4 V
  • Gate Charge
    31 nC
  • Power Dissipation
    45 W
  • Industry
    Commercial, Industrial, Automotive
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SOP Advance
  • Applications
    DC-DC Converters, Switching Voltage Regulators, Motor Drivers

Technical Documents

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