TPH8R008NH Image

TPH8R008NH

Note : Your request will be directed to Toshiba.

The TPH8R008NH from Toshiba is a MOSFET with Continous Drain Current 63 A, Drain Source Resistance 6.6 to 8 milliohm, Drain Source Breakdown Voltage 80 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 2 to 4 V. Tags: Surface Mount. More details for TPH8R008NH can be seen below.

Product Specifications

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Product Details

  • Part Number
    TPH8R008NH
  • Manufacturer
    Toshiba
  • Description
    80 V, 35 nC, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Technology
    Silicon
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    63 A
  • Drain Source Resistance
    6.6 to 8 milliohm
  • Drain Source Breakdown Voltage
    80 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    2 to 4 V
  • Gate Charge
    35 nC
  • Power Dissipation
    61 W
  • Industry
    Commercial, Industrial, Automotive
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SOP Advance
  • Applications
    DC-DC Converters, Switching Voltage Regulators, Motor Drivers

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