TPH9R00CQH Image


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The TPH9R00CQH from Toshiba is an N-Channel Enhancement Mode Silicon MOSFET. It has a drain-source breakdown voltage of over 150 V and a drain-source resistance of 7.9 milli-ohms. This MOSFET has a gate threshold voltage of up to 4.3 V and power dissipation of up to 210 W. It has a continuous drain current of less than 64 A and a pulsed drain current of up to 320 A. This silicon MOSFET offers a high-speed switching operation that is particularly useful for switching voltage regulators.

The TPH9R00CQH is available in a surface-mount package that measures 5 x 6 mm and is ideal for use in high-efficiency DC-DC converters, high-speed switching voltage regulators, and motor driver applications.

Product Specifications

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Product Details

  • Part Number
  • Manufacturer
  • Description
    N-Channel Enhancement Mode Silicon MOSFET


  • Types of MOSFET
    N-Channel Enhancement Mode
  • Technology
  • Transistor Polarity
  • Dimensions
    5 x 6 mm
  • Number of Channels
  • Continous Drain Current
    64 A
  • Drain Source Resistance
    7.9 milliohms
  • Drain Source Breakdown Voltage
    150 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    4.3 V
  • Gate Charge
    44 nC
  • Power Dissipation
    210 W
  • Industry
    Commercial, Industrial, Automotive
  • RoHS Compliant
  • Package Type
    Surface Mount
  • Package
    SOP Advance
  • Applications
    High-Efficiency DC-DC Converters, Switching Voltage Regulators, Motor Drivers

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