TPHR6503PL1

Note : Your request will be directed to Toshiba.

TPHR6503PL1 Image

The TPHR6503PL1 from Toshiba is a MOSFET with Continous Drain Current 420 A, Drain Source Resistance 0.41 to 0.89 milliohm, Drain Source Breakdown Voltage 30 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1.1 to 2.1 V. Tags: Surface Mount. More details for TPHR6503PL1 can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    TPHR6503PL1
  • Manufacturer
    Toshiba
  • Description
    30 V, 110 nC, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Technology
    Silicon
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    420 A
  • Drain Source Resistance
    0.41 to 0.89 milliohm
  • Drain Source Breakdown Voltage
    30 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    1.1 to 2.1 V
  • Gate Charge
    110 nC
  • Power Dissipation
    210 W
  • Industry
    Commercial, Industrial, Automotive
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SOP Advance
  • Applications
    High-Efficiency DC-DC Converters, Switching Voltage Regulators

Technical Documents