The TPN11006PL from Toshiba is a MOSFET with Continous Drain Current 54 A, Drain Source Resistance 8.8 to 18.1 milliohm, Drain Source Breakdown Voltage 60 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1.5 to 2.5 V. Tags: Surface Mount. More details for TPN11006PL can be seen below.