TPN3300ANH Image

TPN3300ANH

Note : Your request will be directed to Toshiba.

The TPN3300ANH from Toshiba is a MOSFET with Continous Drain Current 21 A, Drain Source Resistance 28 to 33 milliohm, Drain Source Breakdown Voltage 100 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 2 to 4 V. Tags: Surface Mount. More details for TPN3300ANH can be seen below.

Product Specifications

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Product Details

  • Part Number
    TPN3300ANH
  • Manufacturer
    Toshiba
  • Description
    100 V, 11 nC, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Technology
    Silicon
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    21 A
  • Drain Source Resistance
    28 to 33 milliohm
  • Drain Source Breakdown Voltage
    100 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    2 to 4 V
  • Gate Charge
    11 nC
  • Power Dissipation
    27 W
  • Industry
    Commercial, Industrial, Automotive
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    TSON Advance
  • Applications
    DC-DC Converters, Switching Voltage Regulators, Motor Drivers

Technical Documents

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