TPN4R712MD Image

TPN4R712MD

Note : Your request will be directed to Toshiba.

The TPN4R712MD from Toshiba is a MOSFET with Continous Drain Current -36 A, Drain Source Resistance 3.8 to 8.1 milliohm, Drain Source Breakdown Voltage -20 V, Gate Source Voltage -12 to 12 V, Gate Source Threshold Voltage -1.2 to -0.5 V. Tags: Surface Mount. More details for TPN4R712MD can be seen below.

Product Specifications

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Product Details

  • Part Number
    TPN4R712MD
  • Manufacturer
    Toshiba
  • Description
    -20 V, 65 nC, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Technology
    Silicon
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -36 A
  • Drain Source Resistance
    3.8 to 8.1 milliohm
  • Drain Source Breakdown Voltage
    -20 V
  • Gate Source Voltage
    -12 to 12 V
  • Gate Source Threshold Voltage
    -1.2 to -0.5 V
  • Gate Charge
    65 nC
  • Power Dissipation
    42 W
  • Industry
    Commercial, Industrial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    TSON Advance
  • Applications
    Lithium-Ion Secondary Batteries, Power Management Switches

Technical Documents

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