TPN6R303NC Image

TPN6R303NC

Note : Your request will be directed to Toshiba.

The TPN6R303NC from Toshiba is a MOSFET with Continous Drain Current 24 A, Drain Source Resistance 5.2 to 8.4 milliohm, Drain Source Breakdown Voltage 30 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1.3 to 2.3 V. Tags: Surface Mount. More details for TPN6R303NC can be seen below.

Product Specifications

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Product Details

  • Part Number
    TPN6R303NC
  • Manufacturer
    Toshiba
  • Description
    30 V, 24 nC, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Technology
    Silicon
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    24 A
  • Drain Source Resistance
    5.2 to 8.4 milliohm
  • Drain Source Breakdown Voltage
    30 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    1.3 to 2.3 V
  • Gate Charge
    24 nC
  • Power Dissipation
    30 W
  • Industry
    Commercial, Industrial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    TSON Advance
  • Applications
    Lithium-Ion Secondary Batteries, Power Management Switches

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