TPN7R006PL Image

TPN7R006PL

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The TPN7R006PL from Toshiba is a MOSFET with Continous Drain Current 76 A, Drain Source Resistance 5.4 to 13.4 milliohm, Drain Source Breakdown Voltage 60 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1.5 to 2.5 V. Tags: Surface Mount. More details for TPN7R006PL can be seen below.

Product Specifications

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Product Details

  • Part Number
    TPN7R006PL
  • Manufacturer
    Toshiba
  • Description
    60 V, 20 nC, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Technology
    Silicon
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    76 A
  • Drain Source Resistance
    5.4 to 13.4 milliohm
  • Drain Source Breakdown Voltage
    60 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    1.5 to 2.5 V
  • Gate Charge
    20 nC
  • Power Dissipation
    75 W
  • Industry
    Commercial, Industrial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    TSON Advance
  • Applications
    High-Efficiency DC-DC Converters, Switching Voltage Regulators

Technical Documents

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