TPW1R005PL Image

TPW1R005PL

Note : Your request will be directed to Toshiba.

The TPW1R005PL from Toshiba is a MOSFET with Continous Drain Current 300 A, Drain Source Resistance 0.75 to 1.65 milliohm, Drain Source Breakdown Voltage 45 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1.4 to 2.4 V. Tags: Surface Mount. More details for TPW1R005PL can be seen below.

Product Specifications

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Product Details

  • Part Number
    TPW1R005PL
  • Manufacturer
    Toshiba
  • Description
    45 V, 122 nC, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Technology
    Silicon
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    300 A
  • Drain Source Resistance
    0.75 to 1.65 milliohm
  • Drain Source Breakdown Voltage
    45 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    1.4 to 2.4 V
  • Gate Charge
    122 nC
  • Power Dissipation
    170 W
  • Industry
    Commercial, Industrial, Automotive
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    DSOP Advance
  • Applications
    High-Efficiency DC-DC Converters, Switching Voltage Regulators, Motor Drivers

Technical Documents

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