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TW015N120CS1F Image

The TW015N120C from Toshiba is an N-Channel Enhancement Mode SiC MOSFET that is ideal for switching voltage regulator applications. It has a drain-source breakdown voltage of over 1200 V, a gate threshold voltage of up to 5 V, and a drain-source on-resistance of less than 20 mΩ. This power MOSFET has a continuous drain current of up to 100 A and power dissipation of less than 431 W. It is based on Toshiba’s 3rd generation chip design that consists of a built-in SiC-based Schottky barrier diode with a low forward voltage. This MOSFET has a high threshold voltage to ensure less susceptibility to malfunction or over-voltage-related damages. It is available in a through-hole package that measures 15.94 x 41.02 mm.

Product Specifications

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Product Details

  • Part Number
  • Manufacturer
  • Description
    1200 V N-Channel SiC MOSFET for Voltage Regulator Applications


  • Types of MOSFET
    N-Channel Enhancement Mode
  • Technology
  • Transistor Polarity
  • Number of Channels
  • Continous Drain Current
    100 A
  • Drain Source Resistance
    15 milliohm
  • Drain Source Breakdown Voltage
    1200 V
  • Gate Source Voltage
    -10 to 25 V
  • Gate Source Threshold Voltage
    3 to 5 V
  • Gate Charge
    158 nC
  • Power Dissipation
    431 W
  • Temperature operating range
    175 degree C
  • Industry
    Commercial, Industrial
  • RoHS Compliant
  • Package Type
    Through Hole
  • Package
  • Applications
    Switching Voltage Regulators

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