Note : Your request will be directed to Toshiba.

TW015N65CS1F Image

The TW015N65C from Toshiba is an N-Channel Enhancement Mode SiC MOSFET that is ideal for switching voltage regulator applications. It has a drain-source breakdown voltage of over 650 V, a gate threshold voltage of up to 5 V, and a drain-source on-resistance of less than 21 mΩ. This MOSFET has a continuous drain current of up to 100 A and power dissipation of less than 342 W. It is based on Toshiba’s 3rd generation chip design that integrates a SiC-based Schottky barrier diode with a low forward voltage. This SiC MOSFET has a high threshold voltage to ensure less susceptibility to malfunctions or short-circuit-related damages. It is available in a through-hole package that measures 15.94 x 41.02 mm.

Product Specifications

View similar products

Product Details

  • Part Number
  • Manufacturer
  • Description
    650 V N-Channel SiC MOSFET for Switching Regulator Applications


  • Types of MOSFET
    N-Channel Enhancement Mode
  • Technology
  • Transistor Polarity
  • Dimensions
    15.94 x 41.02 mm
  • Number of Channels
  • Continous Drain Current
    100 A
  • Drain Source Resistance
    21 milliohm
  • Drain Source Breakdown Voltage
    650 V
  • Gate Source Voltage
    -10 to 25 V
  • Gate Source Threshold Voltage
    5 V
  • Gate Charge
    128 nC
  • Power Dissipation
    342 W
  • Temperature operating range
    -55 to 175 degree C
  • Industry
    Commercial, Industrial
  • RoHS Compliant
  • Package Type
    Through Hole
  • Package
  • Applications
    Switching Voltage Regulators

Technical Documents