The TW015N65C from Toshiba is an N-Channel Enhancement Mode SiC MOSFET that is ideal for switching voltage regulator applications. It has a drain-source breakdown voltage of over 650 V, a gate threshold voltage of up to 5 V, and a drain-source on-resistance of less than 21 mΩ. This MOSFET has a continuous drain current of up to 100 A and power dissipation of less than 342 W. It is based on Toshiba’s 3rd generation chip design that integrates a SiC-based Schottky barrier diode with a low forward voltage. This SiC MOSFET has a high threshold voltage to ensure less susceptibility to malfunctions or short-circuit-related damages. It is available in a through-hole package that measures 15.94 x 41.02 mm.