TW070J120B

Note : Your request will be directed to Toshiba.

The TW070J120B from Toshiba is a MOSFET with Continous Drain Current 36 A, Drain Source Resistance 70 to 90 milliohm, Drain Source Breakdown Voltage 1200 V, Gate Source Voltage -10 to 25 V, Gate Source Threshold Voltage 4.2 to 5.8 V. Tags: Through Hole. More details for TW070J120B can be seen below.

Product Specifications

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Product Details

  • Part Number
    TW070J120B
  • Manufacturer
    Toshiba
  • Description
    1200 V, 67 nC, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Technology
    Silicon
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    36 A
  • Drain Source Resistance
    70 to 90 milliohm
  • Drain Source Breakdown Voltage
    1200 V
  • Gate Source Voltage
    -10 to 25 V
  • Gate Source Threshold Voltage
    4.2 to 5.8 V
  • Gate Charge
    67 nC
  • Power Dissipation
    272 W
  • Industry
    Industrial, Military, Automotive
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    TO-3P
  • Applications
    Switching Voltage Regulators

Technical Documents

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