XPH2R106NC

Note : Your request will be directed to Toshiba.

The XPH2R106NC from Toshiba is a MOSFET with Continous Drain Current 110 A, Drain Source Resistance 1.7 to 4.1 milliohm, Drain Source Breakdown Voltage 60 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1.5 to 2.5 V. Tags: Surface Mount. More details for XPH2R106NC can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    XPH2R106NC
  • Manufacturer
    Toshiba
  • Description
    60 V, 104 nC, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Technology
    Silicon
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    110 A
  • Drain Source Resistance
    1.7 to 4.1 milliohm
  • Drain Source Breakdown Voltage
    60 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    1.5 to 2.5 V
  • Gate Charge
    104 nC
  • Power Dissipation
    170 W
  • Industry
    Industrial, Military, Automotive
  • Qualification
    AEC-Q101
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SOP Advance
  • Applications
    Automotive, Motor Drivers, Switching Voltage Regulators

Technical Documents

Need Help Finding a Product?

Looking for a Product or Supplier?

Let us know what you need, we can help find products that meet your requirement.