IRF830S

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IRF830S Image

The IRF830S from Vishay is a MOSFET with Continous Drain Current 4.5 A, Drain Source Resistance 1500 milliohm, Drain Source Breakdown Voltage 500 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 2 to 4 V. Tags: Through Hole. More details for IRF830S can be seen below.

Product Specifications

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Product Details

  • Part Number
    IRF830S
  • Manufacturer
    Vishay
  • Description
    -20 to 20 V, 74 W, N-Channel Enhancement Mode, MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    4.5 A
  • Drain Source Resistance
    1500 milliohm
  • Drain Source Breakdown Voltage
    500 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    2 to 4 V
  • Gate Charge
    38 nC
  • Power Dissipation
    74 W
  • Temperature operating range
    -55 to 150 Degree C
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    I2PAK (TO-262)

Technical Documents