Si1416EDH

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Si1416EDH Image

The Si1416EDH from Vishay is a MOSFET with Continous Drain Current 3.9 A, Drain Source Resistance 58 milliohm, Drain Source Breakdown Voltage 30 V, Gate Source Voltage -12 to 12 V, Gate Source Threshold Voltage 0.6 to 1.4 V. Tags: Surface Mount. More details for Si1416EDH can be seen below.

Product Specifications

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Product Details

  • Part Number
    Si1416EDH
  • Manufacturer
    Vishay
  • Description
    30 V, N-Channel MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    3.9 A
  • Drain Source Resistance
    58 milliohm
  • Drain Source Breakdown Voltage
    30 V
  • Gate Source Voltage
    -12 to 12 V
  • Gate Source Threshold Voltage
    0.6 to 1.4 V
  • Gate Charge
    7.5 nC
  • Power Dissipation
    2.8 W
  • Temperature operating range
    -55 to 150 ºC
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SC-70
  • Applications
    Portable devices such as smart phones and tablet PCs - DC/DC converters - High frequency switching - OVP switch - Load switch

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